Технические характеристики
| Photocathode Area Shape | Square |
|---|---|
| Photocathode Area Size | 0.8 x 5 x 16 ch(Channel pitch 1 mm) mm |
| Wavelength (Short) | 300 nm |
| Wavelength (Long) | 840 nm |
| Wavelength (Peak) | 660 nm |
| Dimension (W x H x D) | 73 x 60 x 106.2 mm |
| Input Voltage | High voltage power supply (+12 V input): +10.5 to +13.5 Amplifier power supply (±5 input): ±4.5 to ±5.5 V |
| Max. Input Voltage | High voltage power supply (+12 V input): +15 Amplifier power supply (±5 input): ±6 V |
| Max. Input Current | High voltage power supply (+12 V input): +40 Amplifier power supply (±5 input): +110 / -110 mA |
| Max. Output Signal Voltage | Maximum average output signal / ch : +0.4 Maximum pulse output signal : +3.5 V |
| Max. Control Voltage | 1.2 V |
| Recommended Control Voltage Adjustment Range | +0.5 to +1.1 V |
| [Cathode] Luminous Sensitivity Min. | 900 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 1100 μA/lm |
| [Cathode] Radiant Sensitivity Typ. | 133 mA/W |
| [Anode] Luminous Sensitivity Min | 4.5 x 107 V/lm |
| [Anode] Luminous Sensitivity Typ. | 1.1 x 108 V/lm |
| [Anode] Radiant Sensitivity Typ. | 13.3 V/nW |
| [Anode] Vout Depending on PMT Dark Current Typ. | 0.1 mV |
| [Anode] Vout Depending on PMT Dark Current Max. | 0.3 mV |
| Current to Voltage Coversion Factor | 0.1 V/uA |
| Output Offset Voltage Typ. | ±2 mV |
| Ripple Noise (peak to peak) Max. | 1 mV |
| Settling Time Max. | 2 s |
| Operating Ambient Temperature | +5 to +50 ℃ |
| Storage Temperature | -20 to +50 ℃ |
| Weight | 434 g |
