Высокоскоростной фотодетектор, 1000–1650 нм Детектор InGaAs с батарейным смещением, 15 ГГц Модель: 818-BB-35

The 818-BB-35 High Speed InGaAs Detector consists of a free-space 1000 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a

Технические характеристики

• Optical Input Free Space
• Device Type Biased Detector
• Detector Diameter 0.032 mm
• Detector Material InGaAs
• Detector Type PIN
• Acceptance Angle 15°
• Wavelength Range 1000-1650 nm
• 3 dB Bandwidth DC to 15 GHz
• Rise Time 25 ps
• Responsivity 0.9 A/W @ 1550 nm
• Output Connector SMA

• Amplified No
• Bias Voltage 6 V
• Cut-off Frequency >15 GHz
• Dark Current
• Junction Capacitance
• Reverse Breakdown 25 V
• NEP 20 pW/Hz
• Fall Time
• Saturation Current 10 mA
• Thread Type 8-32 and M4