HJT 3.0 Combining gettering process and double-sided wc-Si to maximize cell efficiency and module power. -0.26%/C Pmax temperature coefficient More stable power generation performance and even better in hot climate. Small Chamfer Design Bigger power generation area on the solar cell, increasing 1% cell power of single Piece. SMBB design With Half-Cut Technology Shorter current transmission distance, less resistive loss and higher cell efficiency. Up to 90% Bifaciality Natrual symmetrical bifacial structure bringing more energy Yield from the backsde. Sealing With PIB based sealant Stronger water resistance. greater air impermeability to extent module lifespan. Higher reliability Industrial leading product and performance warranty, ensuring modules’ consistent outstanding performance.
Технические характеристики
CharacteristicsMaterialmonocrystalline siliconCertificationsIEC, CE, TUVOther characteristicsblackPeak power (Wp)
580 W, 585 W, 590 W, 595 W, 600 W
Open-circuit voltage
53.9 V, 54.1 V, 54.3 V, 54.5 V, 54.7 V
Short circuit current
13.4 A, 13.5 A, 13.6 A
Max power voltage
45 V, 45.2 V, 45.4 V, 45.6 V, 45.8 V
Max power current
12.9 A, 13 A, 13.1 A
Module efficiency
22.45 %, 22.65 %, 22.84 %, 23.03 %, 23.23 %
Lenght
2,278 mm (90 in)
Width
1,134 mm (45 in)
Height
30 mm (1 in)
Weight
32 kg (70.55 lb)
