CatalogsSi APD16 PagesOpto-semiconductor Modules28 Pages
Технические характеристики
Low bias operation, for 800 nm band — Stable operation at low bias — High-speed response — High sensitivity and low noise Type : Near infrared type (Low bias operation) Photosensitive area : φ3 mm Package : Metal Package Category : TO-5 Peak sensitivity wavelength (typ.) : 800 nm Spectral response range : 400 to 1000 nm Photosensitivity (typ.) : 0.5 A/W Dark current (max.) : 10 nA Cutoff frequency (typ.) : 120 MHz Terminal capacitance (typ.) : 40 pF Breakdown voltage (typ.) : 150 V Temperature coefficient of breakdown voltage (typ.) : 0.65 V/℃ Gain (typ.) : 60 Measurement condition : Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=800 nm, M=1
