Overlay Overlay is a process to align the upper layer with the lower layer. The overlay error is defined as the deviation between these two layers. Overlay error measurement is an imaging process of calculating the deviation on two different overlay marks which mostly are generated by different processes and composed of different materials. For Overlay measurement, Box-in-Box, Frame-in-Frame, L-Bars, Circle-in-Circle, Cross-in-Cross or customized structures are supported. Critical Dimension Optical measurement is a non-contact, non-destructive measurement technique and it is precise and fast. The structure width can be calculated by extracting intensity information from images. The intensity images should be processed to prevent it from interference by noise or deformation. TZTEK’s metrology system provides the function to eliminate such interference. For structure width which is less than 0.7 μm, UV light can be applied. Film Thickness The system is designed to measure thickness of transparent or semitransparent dielectric film(resist) up to three layers. The automatic calibration function is integrated. main features •Measurement of critical dimensions, overlay •Customization available for OC, SMIF and FOUP •Available for wafer size 200/300 mm and the combination •Visible light and UV light are optional •SECS/GEM
Технические характеристики
CharacteristicsMeasured physical valuecritical dimensionTechnologyopticalMeasured materialfor wafersOther characteristicsnon-contact, high-precision, high-speed, non-destructive
