Высокоскоростной фотодетектор, 300–1100 нм Кремниевый детектор со смещением от батареи, 25 МГц Модель: 818-BB-40

The 818-BB-40 High Speed Silicon Detector consists of a free-space 350 to 1100 nm externally biased Silicon photodetector with a 4.57 mm active diameter and a

Технические характеристики

• Optical Input Free Space
• Device Type Biased Detector
• Detector Diameter 4.57 mm
• Detector Material Silicon
• Detector Type PIN
• Acceptance Angle 60°
• Wavelength Range 350-1100 nm
• 3 dB Bandwidth DC to 25 MHz
• Rise Time 30 ns
• Responsivity 0.6 A/W @ 830 nm
• Output Connector BNC

• Amplified No
• Bias Voltage 24 V
• Cut-off Frequency >25 MHz
• Dark Current
• Junction Capacitance
• Reverse Breakdown 50 V
• NEP &lt,0.09 pW/Hz
• Fall Time &lt,30 ns
• Saturation Current 2 mA
• Thread Type 8-32 and M4