Технические характеристики
| Photosensitive area | 10 x 10 mm |
|---|---|
| Number of elements | 1 |
| Package | Ceramic |
| Incident electron energy range (typ.) | 1 to 30 keV |
| Electron multiplying gain (typ.) | 300 |
| Reverse voltage (max.) | 20 V |
| Dark current (max.) | 60000 pA |
| Cutoff frequency (typ.) | 2.5 MHz |
| Terminal capacitance (typ.) | 450 pF |
| Measurement condition | Ta=25 ℃, VR=5 V |
