Технические характеристики
| Type | Near infrared type |
|---|---|
| Photosensitive area | φ3 mm |
| Package | Metal |
| Package Category | TO-8 |
| Peak sensitivity wavelength (typ.) | 940 nm |
| Spectral response range | 400 to 1100 nm |
| Photosensitivity (typ.) | 70 A/W |
| Dark current (max.) | 150 nA |
| Cutoff frequency (typ.) | 220 MHz |
| Terminal capacitance (typ.) | 8 pF |
| Breakdown voltage (typ.) | 500 V |
| Temperature coefficient of breakdown voltage (typ.) | 3.5 V/℃ |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=940 nm, M=100 |
