Технические характеристики
| Type | Near infrared type (Low bias operation) |
|---|---|
| Photosensitive area | φ0.2 mm |
| Package | Metal |
| Package Category | TO-18 |
| Peak sensitivity wavelength (typ.) | 800 nm |
| Spectral response range | 400 to 1000 nm |
| Photosensitivity (typ.) | 0.5 A/W |
| Dark current (max.) | 0.5 nA |
| Cutoff frequency (typ.) | 1000 MHz |
| Terminal capacitance (typ.) | 1 pF |
| Breakdown voltage (typ.) | 150 V |
| Temperature coefficient of breakdown voltage (typ.) | 0.65 V/℃ |
| Gain (typ.) | 100 |
| Measurement condition | Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=800 nm, M=1 |
