The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.
Технические характеристики
| Part Number: QPD1425L |
| Manufacturer: Qorvo |
| Frequency Min: 1.2 GHz |
| Frequency Max: 1.4 GHz |
| Output Power: 375 W |
| Gain: 17 dB |
| % Typ Efficiency: 70 |
| Supply Voltage: 65 V |
| Package: NI-400 |
| Process: GaN HEMT |
| Type: RF Power Discrete Transistors |
