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QPD0060 - RF Power Transistor from Qorvo

29 250 

RF Power Transistor, DC to 3.6 GHz, 25 dB, 48V, 49.5 dBm, GaN, DFN, 6 Pin, 7.2 x 6.6

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Артикул: QPD0060 TME арт.: QPD0060

The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.

The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a microcell base station power amplifier.

The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz.

Технические характеристики

Part Number: QPD0060
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 3.6 GHz
Output Power: 95 W
Gain: 25 dB
% Typ Efficiency: 73.6
Supply Voltage: 48 V
Id: 150 mA
Package: DFN
Process: GaN
Type: RF Power Discrete Transistors