Поставка оптоэлектронных компонентов ведущих мировых производителей

QPD0020 - RF Power Transistor from Qorvo

15 300 

RF Power Transistor, GaN, DC - 6 GHz, 18.8 dB, 45.4 dBm, 35 W, 48 V, QFN, 4 x 3 mm

Доставка импортных компонентов по России от 3х недель транспортными компаниями СДЭК, Деловые Линии, Major Express.
Оплата физическими и юридическими лицами безналичным расчетом.
Цена может измениться после запроса у поставщика!
Артикул: QPD0020 TME арт.: QPD0020

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can support both CW and pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier.

The device is housed in an industry-standard 4 x 3 mm surface mount QFN package.

Lead-free and ROHS compliant.

Технические характеристики

Part Number: QPD0020
Manufacturer: Qorvo
Frequency Min: 0 GHz
Frequency Max: 6 GHz
Output Power: 35 W
Gain: 18.8 dB
% Typ Efficiency: 77.8
Supply Voltage: 48 V
Id: 30 mA
Package: QFN
Process: GaN
Type: RF Power Discrete Transistors