Fabrication of intrinsic and doped amorphous silicon films. Processes Ionized precursor gases deposit thin films on a substrate. Features • Quick RF ignition with least reflect power for uniform and stable film deposition. • Matured and stable multi-feed in RF technology compatible for even large process chamber. • Continuous adjustable gas between diffuser and substrate providing flexible process possibilities. • High throughput with relative low cost, with capability of customized product design. • Modularized design for easy installation and maintenance, together with highest safety protocol from design to fabrication.
Технические характеристики
CharacteristicsFinished productprofileOther characteristicscontinuous, flexible
