Подложки кремниевых пластин SEM, тип P, 111

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These silicon wafers can be used either as a substrate for thin film research or to make small silicon substrates by dicing the wafer into smaller pieces using a scriber and the Wafer Cleaving / Glass Breaking Pliers. The wafer is shipped in a wafer carrier.

Properties:

• Orientation: &lt,100&gt, or &lt,111&gt, for 3″ (76.2mm) wafer
• Resistance: 1-30 Ohms
• Type P: (Boron) (1 primary flat)
• No SiO2 top coating
• Wafer thickness:
  • 25.4mm diameter = 10 — 12 mill (254 — 304µm)
  • 50.8mm diameter = 9 — 13 mill (230-330um)
  • 76.2mm diameter = 13.6 — 18.5 mill (345-470um)
  • 101.6mm diameter = 18.7 — 22.6 mill (475-575um)
  • 127mm diameter = 23.6 — 25.2 mill (600-690um)
• Roughness: 2nm
• TTV: = &lt,20um
• Wafer is polished on one side

Технические характеристики

GAS02