Поставка оптоэлектронных компонентов ведущих мировых производителей

Наносекундный фотодетектор, 350–1000 нм, кремниевый детектор 0,8 мм, 1 нс Модель: 1621

109 725 

Доставка импортных компонентов по России от 3х недель транспортными компаниями СДЭК, Деловые Линии, Major Express.
Оплата физическими и юридическими лицами безналичным расчетом.
Цена может измениться после запроса у поставщика!

The 1621 Silicon Nanosecond Photodetector is similar to 350-1000 nm detectors with moderate gain and large bandwidth that many of us have built from scratch over and over again. It is ideal for use as a general purpose detector with Q-switched or CW lasers, and its large diameter and DC response make alignment easy. The user-switchable load resistor (50 or 10 k) lets you optimize for response time or sensitivity. Choose a nanosecond response time with 50-V/A sensitivity, or a slower response time with a higher (10,000 V/A) sensitivity. The nanosecond rise time at the 50 load setting is fast enough to see your Q-switched pulses. Or use the 10-k resistor setting for alignment purposes and for detecting lower-power pulses and cow light. Weve even included an open-circuit setting so you can choose the best gain-bandwidth combination for your application. 8-32 mounting thread. M4 metric adaptor and tool now included.

Технические характеристики

  • Optical Input Free Space
  • Device Type Biased Detector
  • Detector Diameter 0.8 mm
  • Detector Material Silicon
  • Detector Type PIN
  • Wavelength Range 350-1000 nm
  • 3 dB Bandwidth DC to 500 MHz
  • Rise Time 1 ns
  • Responsivity 0.55 A/W
  • Output Connector BNC
  • Output Impedance 50 , 10k, & Open
  • Junction Capacitance 3 pF
  • Conversion Gain, Maximum 28 V/W
  • Saturation Power 5 mW
  • Power Requirements Internal 9-V battery
  • Thread Type 8-32 (includes M4 thread adapter)