Технические характеристики
- Type Analog Modulated Laser Diode
- Center Wavelength 635 nm
- Center Wavelength Tolerance ±10 nm
- Output Power 8 mW
- Power Stability
- Beam Divergence Full Angle
- Maximum Operating Current 3000 mA
- Size Ø38.1 x 157.5 mm
- Noise
- Rise/Fall Time 10 ns
- Applications Spectroscopy, Interferometry, Machine Vision, Marking, Flow Cytometry, Tissue Fluorescence
- Power Requirements 4.8 to 12 VDC
- Operating Temperature 0 to 40°C
