Технические характеристики
| Photocathode Area Shape | Round |
|---|---|
| Photocathode Area Size | Φ1.6 mm |
| Wavelength (Short) | 950 nm |
| Wavelength (Long) | 1200 nm |
| Wavelength (Peak) | 1100 nm |
| Dimension (W x H x D) | 80 mm x 60 mm x 126 mm |
| Input Voltage | +4.5 to +5.5 V |
| Max. Input Voltage | +5.5 V |
| Max. Input Current | +100 mA |
| Max. Output Signal Current | 1 µA |
| Max. Control Voltage | +0.9 V |
| Recommended Control Voltage Adjustment Range | +0.5 to +0.8 V |
| [Cathode] Radiant Sensitivity Typ. | 18 mA/W |
| [Anode] Radiant Sensitivity Typ. | 1.8 x 104 A/W |
| [Anode] Dark Current Typ. | 1.3 nA (PMT temperature -30 ℃) |
| [Anode] Dark Current Max. | 13 nA (PMT temperature -30 ℃) |
| [Time Response] Rise Time Typ. | 0.9 ns |
| Ripple Noise (peak to peak) Max. | 0.6 mV |
| Settling Time Max. | 0.2 s |
| Operating Ambient Temperature | +5 to +35 ℃ |
| Storage Temperature | -20 to +50 ℃ |
| Weight | 720 g |
