Технические характеристики
| Photocathode Area Shape | Round |
|---|---|
| Photocathode Area Size | Dia.8 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 870 nm |
| Wavelength (Peak) | 400 nm |
| Dimension (W x H x D) | 22.0 mm x 22.0 mm x 25.0 mm |
| Input Voltage | +11.5 V to +15.5 V |
| Max. Input Voltage | 18 V |
| Max. Input Current | 12 mA |
| Max. Output Signal Current | 100 μA |
| Max. Control Voltage | +1.0 V (Input impedance 30 kΩ) |
| Recommended Control Voltage Adjustment Range | +0.5 V to +1.0 V (Input impedance 30 kΩ) |
| [Cathode] Luminous Sensitivity Min. | 100 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 200 μA/lm |
| [Cathode] Red/White Ratio Typ. | 0.25 |
| [Cathode] Radiant Sensitivity Typ. | 77 mA/W |
| [Anode] Luminous Sensitivity Min | 40 A/lm |
| [Anode] Luminous Sensitivity Typ. | 200 A/lm |
| [Anode] Radiant Sensitivity Typ. | 0.8 x 105 A/W |
| [Anode] Dark Current (after 30min.) Typ. | 1 nA |
| [Anode] Dark Current (after 30min.) Max. | 10 nA |
| [Time Response] Rise Time Typ. | 0.6 ns |
| Ripple Noise (peak to peak) Max. | 0.6 mV |
| Settling Time Max. | 0.2 s |
| Operating Ambient Temperature | +5 ℃ to +50 ℃ |
| Storage Temperature | -20 ℃ to +50 ℃ |
| Weight | 32 g |
