Технические характеристики
| Photocathode Area Shape | Round |
|---|---|
| Photocathode Area Size | Dia.8 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 650 nm |
| Wavelength (Peak) | 400 nm |
| Dimension (W x H x D) | 22.0 mm x 25.0 mm x 22.0 mm |
| Input Voltage | +4.5 V to +5.5 V |
| Max. Input Voltage | 5.5 V |
| Max. Input Current | 3.5 mA |
| Max. Output Signal Current | 100 μA |
| Max. Control Voltage | +1.0 V (Input impedance 1 MΩ) |
| Recommended Control Voltage Adjustment Range | +0.5 V to +1.0 V (Input impedance 1 MΩ) |
| [Cathode] Luminous Sensitivity Min. | 80 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 105 μA/lm |
| [Cathode] Blue Sensitivity Index (CS 5-58) Typ. | 13.5 |
| [Cathode] Radiant Sensitivity Typ. | 110 mA/W |
| [Anode] Luminous Sensitivity Min | 30 A/lm |
| [Anode] Luminous Sensitivity Typ. | 105 A/lm |
| [Anode] Radiant Sensitivity Typ. | 1.1 x 105 A/W |
| [Anode] Dark Current (after 30min.) Typ. | 0.5 nA |
| [Anode] Dark Current (after 30min.) Max. | 5 nA |
| [Time Response] Rise Time Typ. | 0.6 ns |
| Ripple Noise (peak to peak) Max. | 0.2 mV |
| Settling Time Max. | 10 s |
| Operating Ambient Temperature | +5 ℃ to +50 ℃ |
| Storage Temperature | -20 ℃ to +50 ℃ |
| Weight | 32 g |
