Технические характеристики
| Photocathode Area Shape | Round |
|---|---|
| Photocathode Area Size | Dia.25 mm |
| Wavelength (Short) | 185 nm |
| Wavelength (Long) | 850 nm |
| Wavelength (Peak) | 420 nm |
| Dimension (W x H x D) | Dia.35 mm x 192 mm |
| Input Voltage | +/-11.5 V to +/-15.5 V |
| Max. Input Voltage | +/-18 V |
| Max. Input Current | +24 mA / -21 mA |
| Max. Output Signal Voltage | +10 V (Load resistance 500 Ω), +5 V (Load resistance 50 Ω) |
| Max. Control Voltage | +1.5 V (Input impedance 1 MΩ) |
| Recommended Control Voltage Adjustment Range | +0.5 V to +1.4 V (Input impedance 1 MΩ) |
| [Cathode] Luminous Sensitivity Min. | 80 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 150 μA/lm |
| [Cathode] Red/White Ratio Typ. | 0.2 |
| [Cathode] Radiant Sensitivity Typ. | 64 mA/W |
| [Anode] Luminous Sensitivity Min | 2.0 x 106 V/lm |
| [Anode] Luminous Sensitivity Typ. | 8.0 x 106 V/lm |
| [Anode] Radiant Sensitivity Typ. | 3.4 V/nW |
| [Anode] Vout Depending on PMT Dark Current Typ. | 0.3 mV |
| [Anode] Vout Depending on PMT Dark Current Max. | 1.5 mV |
| Current to Voltage Coversion Factor | 0.1 V/uA |
| Output Offset Voltage Typ. | +/-1 mV |
| Ripple Noise (peak to peak) Max. | 0.8 mV |
| Settling Time Max. | 10 s |
| Operating Ambient Temperature | +5 ℃ to +50 ℃ |
| Storage Temperature | -20 ℃ to +50 ℃ |
| Weight | 270 g |
