Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon. Molecular weight:115.104 Density:4.9 g/cm3 Colour:gray Melting point:1326 °C Boiling point:5100ºC EINECS (EC NO.)：234-616-8 Cobalt disilicide (CoSi2) has low resistivity and good thermal stability. It is currently widely used as a contact in large-scale integrated circuits, and CoSi2 has a crystal structure similar to Si, so epitaxial CoSi2 can be formed on a Si substrate /Si structure, used to study the interface characteristics of epitaxial metal silicon. 1.High purity: the highest purity can reach 99.99%, XRD detect no impurity phase； 2.Concentrated distribution: standard normal particle size distribution, no bimodal or multimodal.
Технические характеристики
CharacteristicsMaterialsilicon, metal
