SRAM IS61WV25616BLL-10TLI.
Время Доступа | 10нс |
Диапазон Напряжения Питания | 2.4В до 3.6В |
Количество Выводов | 44вывод(-ов) |
Конфигурация Памяти SRAM | 256К x 16бит |
Максимальная Рабочая Температура | 85 C |
Минимальная Рабочая Температура | -40 C |
Размер Памяти | 4Мбит |
Стиль Корпуса Микросхемы Памяти | TSOP-II |
Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
Interface Type | Parallel |
Memory Format | SRAM |
Memory Size | 4Mb (256K x 16) |
Memory Type | Volatile |
Operating Supply Voltage | 2.4V ~ 3.6V |
Automotive | No |
Chip Density (bit) | 4M |
Data Rate Architecture | SDR |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Max. Access Time (ns) | 10 |
Maximum Operating Supply Voltage (V) | 3.6 |
Maximum Operating Temperature (°C) | 85 |
Minimum Operating Supply Voltage (V) | 2.4 |
Minimum Operating Temperature (°C) | -40 |
Mounting | Surface Mount |
Number of Bits/Word (bit) | 16 |
Number of Ports | 1 |
Number of Words | 256K |
Operating Current (mA) | 45 |
Part Status | NRND |
PCB changed | 44 |
Pin Count | 44 |
PPAP | No |
Process Technology | CMOS |
Standard Package Name | SOP |
Supplier Package | TSOP-II |
Supplier Temperature Grade | Industrial |
Timing Type | Asynchronous |
Typical Operating Supply Voltage (V) | 2.5|3.3 |
Вес, г | 2.9 |