SRAM IS61WV102416BLL-10MLI.
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
HTS | 8542.32.00.41 |
PCB changed | 48 |
Mounting | Surface Mount |
Package Length | 11 |
Package Width | 9 |
Package Height | 0.9(Max) |
Lead Shape | Ball |
Chip Density (bit) | 16M |
Number of Words | 1M |
Number of Bits/Word (bit) | 16 |
Data Rate Architecture | SDR |
Address Bus Width (bit) | 20 |
Number of Ports | 1 |
Timing Type | Asynchronous |
Max. Access Time (ns) | 10 |
Process Technology | CMOS |
Minimum Operating Supply Voltage (V) | 2.4 |
Typical Operating Supply Voltage (V) | 2.5|3.3 |
Maximum Operating Supply Voltage (V) | 3.6 |
Operating Current (mA) | 95 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 85 |
Supplier Temperature Grade | Industrial |
Pin Count | 48 |
Supplier Package | TFBGA |
Standard Package Name | BGA |
Access Time | 10ns |
ECCN | 3A991B2A |
HTSUS | 8542.32.0041 |
Memory Format | SRAM |
Memory Interface | Parallel |
Memory Size | 16Mb (1M x 16) |
Memory Type | Volatile |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Mounting Type | Surface Mount |
Operating Temperature | -40В°C ~ 85В°C (TA) |
Package | Tray |
Package / Case | 48-TFBGA |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | 48-miniBGA (9×11) |
Technology | SRAM — Asynchronous |
Voltage — Supply | 2.4V ~ 3.6V |
Write Cycle Time — Word, Page | 10ns |
Время Доступа | 10нс |
Диапазон Напряжения Питания | 2.4В до 3.6В |
Количество Выводов | 48вывод(-ов) |
Конфигурация Памяти SRAM | 1М x 16бит |
Максимальная Рабочая Температура | 85 C |
Минимальная Рабочая Температура | -40 C |
Размер Памяти | 16Мбит |
Стиль Корпуса Микросхемы Памяти | Mini BGA |
Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |