Технические характеристики
| Photosensitive area | 1×1 mm |
|---|---|
| Number of elements | 1 |
| Package category | TO-8 |
| Package | Metal |
| Cooling | Two-stage TE-cooled |
| Cutoff wavelength (typ.) | 10.2 μm |
| Peak sensitivity wavelength (typ.) | 5.6 μm |
| Photosensitivity (typ.) | 0.0038 A/W |
| Detectivity D* (typ.) | 3.2×108 cm・Hz1/2/W |
| Noise equivalent power (typ.) | 3.1×10-10 W/Hz1/2 |
| Rise time (typ.) | 3 ns |
| Terminal capacitance (typ.) | 0.6 pF |
| Measurement condition | Ta=25℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz, Terminal capacitance: VR=0 V, f=1 MHz |
