Технические характеристики
| Photosensitive area | φ1 mm |
|---|---|
| Number of elements | 1 |
| Package category | TO-8 |
| Package | Metal |
| Cooling | Two-stage TE-cooled |
| Cutoff wavelength (typ.) | 5.9 μm |
| Peak sensitivity wavelength (typ.) | 4.9 μm |
| Photosensitivity (typ.) | 1.6 A/W |
| Detectivity D* (typ.) | 5.0×109 cm・Hz1/2/W |
| Noise equivalent power (typ.) | 1.8×10-11 W/Hz1/2 |
| Rise time (typ.) | 400 ns |
| Measurement condition | Td=-30℃, Detectivity D*: λ=λp, fc=1200 Hz, Δf=1 Hz |
