Технические характеристики
| Type | Head-on type |
|---|---|
| Tube Size | Dia.51 mm |
| Photocathode Area Shape | Square |
| Photocathode Area Size | 10 x 10 mm |
| Wavelength (Short) | 160 nm |
| Wavelength (Long) | 930 nm |
| Wavelength (Peak) | 300-800 nm |
| Spectral Response Curve Code | 650S |
| Photocathode Material | GaAs |
| Window Material | Quartz |
| Dynode Structure | Linear-focused |
| Dynode Stages | 10 |
| [Max. Rating] Anode to Cathode Voltage | 2200 V |
| [Max. Rating] Average Anode Current | 0.001 mA |
| Anode to Cathode Supply Voltage | 1500 V |
| [Cathode] Luminous Sensitivity Min. | 300 μA/lm |
| [Cathode] Luminous Sensitivity Typ. | 600 μA/lm |
| [Cathode] Red/White Ratio (R-68) Typ. | 0.58 |
| [Cathode] Radiant Sensitivity Typ. | 71 mA/W |
| [Anode] Luminous Sensitivity Min. | 150 A/lm |
| [Anode] Luminous Sensitivity Typ. | 300 A/lm |
| [Anode] Radiant Sensitivity Typ. | 3.6 x 104 A/W |
| [Anode] Gain Typ. | 5.0 x 105 |
| [Anode] Dark Current (after 30min.) Typ. | 20 (s-1) (after one hour storage at -20 deg.C) nA |
| [Anode] Dark Current (after 30min.) Max. | 50 (s-1) (after one hour storage at -20 deg.C) nA |
| [Time Response] Rise Time Typ. | 3 ns |
| [Time Response] Transit Time Typ. | 23 ns |
