Технические характеристики
| Feature | Third Generation, High Q.E. |
|---|---|
| Spectral Response (Short) | 280 nm |
| Spectral Response (Long) | 820 nm |
| Spectral Response (Peak) | 480 to 530 nm |
| Input Window | Borosilicate Glass |
| Index of Refraction | 1.49 |
| Effective Photocathode Area | 16 x 16 mm |
| Stage of MCP | 1 |
| Photocathode Material | Enhanced red GaAsP |
| Gate Function | 有 / 無 |
| Minimum Gate Time | 5 ns / — ns |
| Luminous Sensitivity | 800 μA/lm |
| Radiant Sensitivity | 192 mA/W |
| Quantum Efficiency (QE) | 45 % |
| Luminous Gain | 2.5 x 104 (lm/m2)/lx |
| Radiant Emittance Gain | 1.3 x 104 (W/m2)/(W/m2) |
| Equivalent Background Input (EBI) | 3.0 x 10-12 lm/cm2 |
| Equivalent Background Input (EBI) | 8.0 x 10-15 W/cm2 |
| Limiting Resolution | 57 Lp/mm |
| Operation Ambient Temperature | -20 to +40 ℃ |
| Storage Ambient Temperature | -55 to +60 ℃ |
| Maximum Shock | 300 m/s2 (30G), 18 ms |
| Maximum Vibration | 10 Hz to 55 Hz, 0.35 mm (p-p) |
