Технические характеристики
| Feature | Second Generation |
|---|---|
| Spectral Response (Short) | 160 nm |
| Spectral Response (Long) | 320 nm |
| Spectral Response (Peak) | 230 nm |
| Input Window | Synthetic Silica |
| Index of Refraction | 1.51 |
| Effective Photocathode Area | Dia.18 mm |
| Stage of MCP | 2 |
| Photocathode Material | Cs-Te |
| Gate Function | Non |
| Minimum Gate Time | — ns |
| Radiant Sensitivity | 59 mA/W |
| Quantum Efficiency (QE) | 32 % |
| Radiant Emittance Gain | 3.0 x 106 (W/m2)/(W/m2) |
| Equivalent Background Input (EBI) | 4.0 x 10-15 W/cm2 |
| Limiting Resolution | 28 Lp/mm |
| Operation Ambient Temperature | -20 to +40 ℃ |
| Storage Ambient Temperature | -55 to +60 ℃ |
| Maximum Shock | 300 m/s2 (30G), 18 ms |
| Maximum Vibration | 10 Hz to 55 Hz, 0.35 mm (p-p) |
