Технические характеристики
| Feature | Second Generation |
|---|---|
| Spectral Response (Short) | 160 nm |
| Spectral Response (Long) | 650 nm |
| Spectral Response (Peak) | 400 nm |
| Input Window | Synthetic Silica |
| Index of Refraction | 1.46 |
| Effective Photocathode Area | Dia.25 mm |
| Stage of MCP | 2 |
| Photocathode Material | Bialkali |
| Gate Function | Yes |
| Minimum Gate Time | 10 ns ns |
| Luminous Sensitivity | 40 μA/lm |
| Radiant Sensitivity | 40 mA/W |
| Quantum Efficiency (QE) | 12 % |
| Luminous Gain | 1.0 x 106 (lm/m2)/lx |
| Radiant Emittance Gain | 3.0 x 106 (W/m2)/(W/m2) |
| Equivalent Background Input (EBI) | 5.0 x 10-13 lm/cm2 |
| Equivalent Background Input (EBI) | 5.0 x 10-16 W/cm2 |
| Limiting Resolution | 25 Lp/mm |
| Operation Ambient Temperature | -20 to +40 ℃ |
| Storage Ambient Temperature | -55 to +60 ℃ |
| Maximum Shock | 300 m/s2 (30G), 18 ms |
| Maximum Vibration | 10 Hz to 55 Hz, 0.7 mm (p-p) |
