Технические характеристики
| Feature | Third Generation, with Power Supply |
|---|---|
| Spectral Response (Short) | 370 nm |
| Spectral Response (Long) | 920 nm |
| Spectral Response (Peak) | 700 to 800 nm |
| Input Window | Borosilicate Glass |
| Index of Refraction | 1.49 |
| Effective Photocathode Area | Dia.18 mm |
| Stage of MCP | 1 |
| Photocathode Material | GaAs |
| Gate Function | Non |
| Minimum Gate Time | — ns |
| Luminous Sensitivity | 1500 μA/lm |
| Radiant Sensitivity | 170 mA/W |
| Quantum Efficiency (QE) | 30 % |
| Luminous Gain | 4.0 x 104 (lm/m2)/lx |
| Radiant Emittance Gain | 1.2 x 104 (W/m2)/(W/m2) |
| Equivalent Background Input (EBI) | 2.0 x 10-11 lm/cm2 |
| Equivalent Background Input (EBI) | 4.0 x 10-14 W/cm2 |
| Limiting Resolution | 64 Lp/mm |
| Operation Ambient Temperature | -20 to +40 ℃ |
| Storage Ambient Temperature | -55 to +60 ℃ |
| Maximum Shock | 300 m/s2 (30G), 18 ms |
| Maximum Vibration | 10 Hz to 55 Hz, 0.35 mm (p-p) |
