Поставка оптоэлектронных компонентов ведущих мировых производителей

Diffusion furnace DOA-420cabinethigh-temperatureautomatic

Доставка импортных компонентов по России от 3х недель транспортными компаниями СДЭК, Деловые Линии, Major Express.
Оплата физическими и юридическими лицами безналичным расчетом.
Цена может измениться после запроса у поставщика!
Артикул: DOA-420 TME арт.: DOA-420

The Equipment Is Mainly Used For Doping And Form Pn Junctions On Silicon Wafers In The Manufacturing Process Of Crystalline Silicon Solar Cells. Prepare quartz boat & wafers→ Insert wafers→ Loading wafers→ Choose recipe → Boat loading→ tube Vacuuming→ Temperature rising→ Oxygen inlet→BBr3/BCL3 inlet→ Push in→ DOA treatment→ Boat unloading→ Cooling→ Testing→ Wafer unloading · High temperature boron diffusion. · BBr3、BCL3. · Patented technology. · Unique double-layer-nested furnace door structure. · Patented technology for exhaust gas treatment system. · High-speed integral module boat pushing mechanism. · Intelligent automatic control. · MES software with independent intellectual property right. · Comprehensive safety alarm protection functions such as over-temperature prevention, broken thermocouple, and boat collision. · Compatible with S.C smart factory solution.

Технические характеристики

CharacteristicsFunctiondiffusionConfigurationcabinetOther characteristicshigh-temperature, automatic, horizontalMaximum temperature

Max.: 1,100 °C (2,012 °F)

Min.: 400 °C (752 °F)